.png){kind=icon}
Return
Semiconductor device simulation using a viscous-hydrodynamic model
.png){kind=icon}
PRE
AI
DOI：10.1016/S0045-7825(02)00441-3.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
In this article we deal with a hydrodynamic model of Navier-Stokes (NS) type for semiconductors including a physical viscosity in the momentum and energy equations. A stabilized finite difference scheme with upwinding based on the characteristic variables is used for the discretization of the NS equations, while a mixed finite element scheme is employed for the approximation of the Poisson equation. A consistency result for the method is established showing that the scheme is first-order accurate in both space and time. We also perform a stability analysis of the numerical method applied to a linearized incompletely parabolic system in two space dimensions with vanishing viscosity. A thorough numerical parametric study as a function of the heat conductivity and of the momentum viscosity is carried out in order to investigate their effect on the development of shocks in both one and two space dimensional devices. (C) 2002 Elsevier Science B.V. All rights reserved.
Keywords:
CARRIER TRANSPORT
SILICON
AI Summary
Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.
Journal
IF:
7.3
Papers:
1.3W
Citations:
5.6W
Organization
No organization information available
Cited Papers
Lanthanide-based fluorogenic peptide substrate for the highly sensitive detection of thermolysin
PREAI
ShareSaveNMR imaging in the presence of magnetic field inhomogeneities and gradient field nonlinearities
PREAI
ShareSaveA Comparison of Magnetic Resonance and Computed Tomographic Image Quality After the Implantation of Tantalum and Titanium Spinal Instrumentation.png)
Spine
SpineIF0
PREAI
ShareSaveCharge distributions due to paramagnetism and diamagnetism in thin mesoscopic superconducting rings
PREAI
ShareSaveShareSaveShareSaveModeling reaction pathways of low energy particle deposition on thiophene via ab initio calculations
PREAI
ShareSave
ShareSave
View more