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Semiconductor electrical parameter measurement based on Hall effect and the improved mobility spectrum algorithm
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DOI：10.1016/j.measurement.2024.115257.png)
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Abstract
En 中文
The Hall effect measurement method has became one of the main methods for measuring the parameters of semiconductor materials because of its outstanding advantages such as simple system structure and wide measurement range. However, it also has defects such as long measurement time, complex error sources and side effects that interfere the measurement results. In this paper, in contrast to conventional measurement system, we optimized the measurement process by introducing the reverse-magnetic-field reciprocity and built a Hall effect measurement system. The measurement time was shortened and the measurement error was reduced too. In addition, we improved the maximum entropy mobility spectrum algorithm by introducing the information of the partition function K multiplied by the probability P to increase more constraints. The results showed that, compared with the conventional system, the measurement time of the proposed system was shortened to 1/5 and the standard deviation of voltage is reduced; the proposed mobility spectrum algorithm improved the peak resolution and the fitting degree by two orders of magnitude.
Keywords:
Semiconductor measurement
Hall effect
Reverse-magnetic-field reciprocity
Mobility spectrum algorithm