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SiC Integrated Circuit Control Electronics for High-Temperature Operation
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DOI：10.1109/TIE.2014.2379212.png)
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Abstract
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This paper is an important step toward the development of complex integrated circuit (IC) control electronics that have to attend to high-temperature environment power applications. We present in premiere a prototype set of essential mixed-signal ICs on SiC capable of controlling power switches and a lateral power MESFET able to operate at high temperatures, all embedded on the same chip. Also, we report for the first time the functionality of standard Si-CMOS topologies on SiC for the master-slave data flip-flop (FF) and data-reset FF digital building blocks designed with MESFETs. Concretely, we present the complete development of SiC-MESFET IC circuitry, able to integrate gate drivers for SiC power devices. This development is based on the mature and stable Tungsten-Schottky interface technology used for the fabrication of stable SiC Schottky diodes for the European Space Agency Mission BepiColombo.
Keywords:
Digital integrated circuits (ICs)
driver
high density
high power
high temperature
integrated circuits
MESFET
mixed signal
silicon carbide (SiC)
voltage reference
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