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Side gate vertical OECTs for integrated complementary circuits
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DOI：10.1039/D5MH02080H.png)
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Abstract
En 中文
Due to their unique mixed ionic–electronic working mechanism and good biocompatibility; organic electrochemical transistors (OECTs) show great potential for applications in bioelectronics and neuromorphic electronics. Compared with the widely adopted floating gate setup; side gate OECTs; with well-defined device geometry and simpler fabrication and testing procedures; which may unleash the potential of OECTs for further integration and commercialization; are still under development. Here; the gate size (SG) and gate–channel distance (DGC) of side gates in vertical OECTs are precisely modulated by combining high-resolution printed silver gates and photo-patternable transistor channels. It is demonstrated that the performances of Homo-gDPP-based vOECTs show distinct variation when SG and DGC vary from 200 to 1600 µm2 and from 500 to 15 µm; respectively; for a channel area of only 30 × 30 µm2. Champion on current; peak transconductance; and on/off current ratio values of 13.83 ± 0.54 mA; 87.56 ± 2.76 mS; and (5.21 ± 0.27) × 108 are obtained with an SG of 1600 µm2 and a DGC of 15 µm; which are among the highest reported for side gate OECTs. Moreover; high-density complementary circuits are integrated in combination with the channel size and SG control; revealing the fastest switching speed (<9 ms) in reported side gate OECT circuits based on quasi-solid-state electrolytes (PEG–LiCl). This work provides a strategy for the optimal design and performance enhancement of OECTs and demonstrates ways for the miniaturization and integration of next-generation electronics based on OECTs.
Keywords:
Organic electrochemical transistors
Side gate design
Vertical OECTs
Complementary circuits
Miniaturization
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