Silicon IC process compatible thin metal film post-processing module

doi:10.1016/S0924-4247(98)00051-X

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Silicon IC process compatible thin metal film post-processing module

1998-06-01

PRE

D.D.L. Wijngaards *

M. Bartek

R.F. Wolffenbuttel

DOI：10.1016/S0924-4247(98)00051-X

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Abstract

En 中文

A thin metal film post-processing module, compatible with standard IC processing, is presented. The module is based on lift-off technique and enables integration of thin metal film structures with standard microelectronic processing. A wide range of metals can be used and the technique is intended for fabrication of integrated thin metal film transducers. Typical for the module are the flexibility of metal used, the flexibility of deposition order and the low temperature at which deposition takes place. As the thermal budget of the electronics remains unaffected and the standard IC process remains intact, full compatibility is assured. Application of the module is demonstrated by fabrication of low temperature coefficient of resistance (low-TCR) NiCr resistors (minimum width 1 mu m, thickness 35-75 nm, resistivity 120 mu Omega cm and TCR 40 x 10(-6) K-1) and Pt/Ti resistors for on-chip local temperature measurement (Pt/Ti 80 nm/20 nm, matching Pt-100 within 2.5%). (C) 1998 Elsevier Science S.A. All rights reserved.

Keywords:

thin metal films

IC process compatibility

post-processing

NiCr

lift-off etching

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