.png){kind=icon}
.png){kind=icon}
Return
Silicon self-diffusion under extrinsic conditions
.png){kind=icon}
PRE
AI
DOI：10.1063/1.1425953.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
Self-diffusion in silicon is investigated under extrinsic carrier conditions by monitoring the diffusion of Si-30 in isotopically enriched silicon layers with boron and phosphorus background doping. At 1000 degreesC, we find that the Si self-diffusion coefficient is slightly enhanced in both n- and p-type backgrounds. This is direct evidence of the existence of both negatively and positively charged native point defects in Si. We use a simple model involving three charge states to explain the data, which yield the relative contributions of these charge states to the overall self-diffusion coefficient and the locations of the deep levels they introduce in the band gap. (C) 2001 American Institute of Physics.
Keywords:
POINT-DEFECTS
SI
DEACTIVATION
ENTROPY
GE
AI Summary
Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.
Journal
IF:
3.6
Papers:
10.4W
Citations:
17.8W
Organization
No organization information available