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Silicon superconducting quantum interference device

delete2015-08-17
delete10
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OA
AI
J
J. E. Duvauchelle
A
Anaïs Francheteau
C
C. Marcenat
F
F. Chiodi
D
D. Débarre
K
K. Hasselbach
J
J. R. Kirtley
F
F. Lefloch *
DOI:10.1063/1.4928660delete
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Abstract

Abstract

En 中文
We have studied a Superconducting Quantum Interference Device (SQUID) made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily doping a silicon wafer with boron atoms using the gas immersion laser doping technique. The SQUID is composed of two nano-bridges (Dayem bridges) in a loop and shows magnetic flux modulation at low temperature and low magnetic field. The overall behavior shows very good agreement with numerical simulations based on the Ginzburg-Landau equations. (C) 2015 AIP Publishing LLC.
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Journal

Applied Physics Letters cover
Applied Physics Letters
IF:
3.6
Papers:
10.4W
Citations:
17.8W

Organization

U
universite grenoble alpes (uga)
Scholars:
2.1W
Papers: 1.5W
Citations: 23
C
communaute universite grenoble alpes
Scholars:
3.5W
Papers: 2.7W
Citations: 29
C
CEA
Scholars:
3.5W
Papers: 2.3W
Citations: 62
U
Universite Paris Saclay
Scholars:
7.3W
Papers: 5.3W
Citations: 540
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