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Single-electron-based flexible multivalued logic gates

delete2008-03-03
delete25
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OA
AI
C
C. K. Lee *
S
S. J. Kim
S
Seung‐Jun Shin
J
Jihun Choi
Y
Yasuo Takahashi
DOI:10.1063/1.2888164delete
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Abstract

Abstract

En 中文
Single-electron transistor (SET)-based multivalued (MV) not-AND (NAND) and not-OR (NOR) logic cells were implemented on a silicon-on-insulator chip. Depending on the ways of connecting two SETs with a field-effect transistor, the voltage transfer characteristics show typical NAND or NOR gate functions for various input voltages, which are binary, MV, and binary-MV mixed. Moreover, the switching functionality of our NAND (NOR) can convert to OR (AND) operation by simply adjusting their initial input voltages. These flexible two-input logic gates are expected to provide four basic arithmetic cells for the SET MV logic gate family. (c) 2008 American Institute of Physics.
Keywords:
MULTIPLE-VALUED LOGIC
TRANSISTOR
MEMORY
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Journal

Applied Physics Letters cover
Applied Physics Letters
IF:
3.6
Papers:
10.4W
Citations:
17.8W

Organization

C
Chungbuk National University
Scholars:
8.5K
Papers: 8.0K
Citations: 6.4K
H
Hokkaido University
Scholars:
3.6W
Papers: 2.5W
Citations: 2.6W