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Single-Mode 850 and 1060 nm VCSELs With Zn-Diffusion Apertures for AI Data Interconnection
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DOI：10.1109/jstqe.2026.3715212.png)
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Abstract
En 中文
High-speed vertical-cavity surface-emitting lasers (VCSELs) with single-mode (SM) output and strong immunity to optical feedback play a vital role in further increasing the package density of co-packaged optics (CPO) systems for modern AI scale-out and scale-up networks. Compared to the combination of traditional copper cable with digital signal processing (DSP) ICs, the VCSEL based optical solutions offer significant energy savings and provide a much higher data rate per unit area. In this paper, we demonstrate that optimizing the structure of Zn-diffusion apertures inside VCSEL cavities can simultaneously improve the SM output power and speed of both 850 and 1060 nm VCSELs. Compared with the 850 nm VCSEL, the 1060 nm VCSEL exhibits superior SM characteristics, comparable electrical-to-optical (E-O) bandwidth (∼25 GHz), and much less spatial hole burning effect under dynamic operations. Nevertheless, the 850 nm VCSEL exhibits superior transmission performance over the same 1 km length of few-mode fibers (FMF) to that of the 1060 nm one due to the stronger bandwidth enhancement effect. The direct-modulation channel bandwidths achieved at 850 and 1060 nm are 39 and 36 GHz, respectively, both with the same optical coupling efficiency as high as around 60% through a single lens on the fiber tip. At the 850 nm wavelength, error-free 56 Gbit/s transmission over 1 km under a low bias current of 4 mA is obtained without using any power-hungry retiming DSP ICs. The transmission distance can be further extended to 2 km FMF at 48 Gbit/sec due to the lower propagation loss for the 1060 nm wavelength window.
Keywords:
Semiconductor lasers
vertical-cavity surface emitting lasers (VCSEL)
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