Single-parameter quantized charge pumping in high magnetic fields

doi:10.1063/1.3063128

Single-parameter quantized charge pumping in high magnetic fields

2009-01-07

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DOI：10.1063/1.3063128

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Abstract

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We study single-parameter quantized charge pumping via a semiconductor quantum dot in high magnetic fields. The quantum dot is defined between two top gates in an AlGaAs/GaAs heterostructure. Application of an oscillating voltage to one of the gates leads to pumped current plateaus in the gate characteristic, corresponding to controlled transfer of integer multiples of electrons per cycle. In a perpendicular-to-plane magnetic field the plateaus become more pronounced indicating an improved current quantization. Current quantization is sustained up to magnetic fields where full spin polarization of the device can be expected.

Keywords:

aluminium alloys

electron spin polarisation

gallium arsenide

magnetic field effects

semiconductor quantum dots

Single-parameter quantized charge pumping in high magnetic fields

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