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Solid State Defect Emitters With no Electrical Activity
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DOI：10.1002/advs.202503350.png)
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Abstract
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Point defects may introduce defect levels into the fundamental bandgap of the host semiconductors that alter the electrical properties of the material. As a consequence, the in-gap defect levels and states automatically lower the threshold energy of optical excitation associated with the optical gap of the host semiconductor. It is, therefore, a common assumption that solid-state defect emitters in semiconductors ultimately alter the conductivity of the host. This study demonstrate, on a particular defect in 4H silicon carbide, that an unrecognized class of point defects exists that are optically active but electrically inactive in the ground state.
Keywords:
first-principles calculations
optical transition
point defects
silicon carbide
single photon emitter
Journal
IF:
14.1
Papers:
1.8W
Citations:
11.5W
Organization
Cited Papers
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