.png){kind=icon}
.png){kind=icon}
Return
Spin coherence in two-dimensional materials
.png){kind=icon}
OA
AI
DOI：10.1038/s41524-019-0182-3.png)
.png){kind=icon}
.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
Spin defects in semiconducting solids are promising platforms for the realization of quantum bits. At low temperature and in the presence of a large magnetic field, the central spin decoherence is mainly due to the fluctuating magnetic field induced by nuclear spin flip-flop transitions. Using spin Hamiltonians and a cluster expansion method, we investigate the electron spin coherence of defects in two-dimensional (2D) materials, including delta-doped diamond layers, thin Si films, MoS2, and h-BN. We show that isotopic purification is much more effective in 2D than in three-dimensional materials, leading to an exceptionally long spin coherence time of more than 30 ms in an isotopically pure monolayer of MoS2.
Keywords:
SINGLE-PHOTON EMISSION
QUANTUM
AI Summary
Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.
Journal
IF:
11.9
Papers:
2.4K
Citations:
1.7W