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Spin Defects in Hexagonal Boron Nitride as 2D Strain Sensors
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DOI：10.1002/adfm.202530638.png)
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Abstract
En 中文
Lattice deformation is a powerful way to engineer the properties of 2D materials, making their precise measurement an important challenge for both fundamental science and technological applications. Here, we demonstrate that boron-vacancy ( V B − ${\rm V}_{\text{B}}^-$ ) color centers in hexagonal boron nitride (hBN) enable quantitative strain sensing with sub-micrometer spatial resolution. Using this approach, we precisely quantify the strain-induced shift of the E 2 g ${\rm E}_{\rm 2g}$ Raman mode in a multilayer hBN flake under uniaxial stress, establishing V B − ${\rm V}_{\text{B}}^-$ centers as a new tool for strain metrology in van der Waals heterostructures. Beyond strain sensing, our work also highlights the unique multimodal sensing functionalities offered by V B − ${\rm V}_{\text{B}}^-$ centers, which will be valuable for future studies of strain-engineered 2D materials.
Keywords:
2D materials
hBN
quantum sensing
Raman spectroscopy
strain
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