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Spin dependent tunneling
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DOI：10.1016/S1359-0286(99)00008-X.png)
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Abstract
En 中文
During the past four years, researchers made significant advances in fabricating magnetic tunnel junctions with reproducible magnetic and magnetotransport properties. Important developments include optimization of oxidation processes, discovery of new class of magnetic tunnel junctions, combination of spin dependent tunneling with the Coulomb blockade effect, and a better theoretical understanding of the I-V characteristics of magnetic tunnel junctions. These developments make them promising candidates for magnetic random access memories. (C) 1999 Elsevier Science Ltd. All rights reserved.
Keywords:
FIELD COLOSSAL MAGNETORESISTANCE
COULOMB-BLOCKADE
GIANT MAGNETORESISTANCE
TEMPERATURE-DEPENDENCE
JUNCTIONS
FILMS
FERROMAGNET
ELECTRONS
INSULATOR
OSCILLATIONS
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