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Spin memory effect in charged single telecom quantum dots
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DOI：10.1364/OE.438708.png)
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Abstract
En 中文
Single InP-based quantum dots emitting in the third telecom window are probed quasi-resonantly in polarization-resolved microphotoluminescence experiments. For charged quantum dots we observe negative circular polarization being a fingerprint of the optical spin writing of the carriers within the quantum dots. The investigated quantum dots have a very dense ladder of excited states providing relatively easy quasi-resonant optical excitation, and together with telecom wavelengths emission they bring quantum gates and memories closer to compatibility with fiber-optic communication. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Keywords:
RELAXATION
POLARIZATION
PHOTONS
STORAGE
TIME
Journal
IF:
3.3
Papers:
6.1W
Citations:
14.3W