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Spin-torque building blocks
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DOI：10.1038/NMAT3823.png)
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Abstract
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The discovery of the spin-torque effect has made magnetic nanodevices realistic candidates for active elements of memory devices and applications. Magnetoresistive effects allow the read-out of increasingly small magnetic bits, and the spin torque provides an efficient tool to manipulate - precisely, rapidly and at low energy cost - the magnetic state, which is in turn the central information medium of spintronic devices. By keeping the same magnetic stack, but by tuning a device's shape and bias conditions, the spin torque can be engineered to build a variety of advanced magnetic nanodevices. Here we show that by assembling these nanodevices as building blocks with different functionalities, novel types of computing architecture can be envisaged. We focus in particular on recent concepts such as magnonics and spintronic neural networks.
Keywords:
MUTUAL PHASE-LOCKING
DOMAIN-WALL MOTION
MAGNETIC MULTILAYER
TUNNEL-JUNCTIONS
DRIVEN
MAGNETORESISTANCE
MEMRISTOR
DEVICE
BIAS
OSCILLATORS
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