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Stacking angle dependent multiple excitonic resonances in bilayer tungsten diselenide
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DOI：10.1515/nanoph-2020-0034.png)
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Abstract
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We report on multiple excitonic resonances in bilayer tungsten diselenide (BL-WSe2) stacked at different angles and demonstrate the use of the stacking angle to control the occurrence of these excitations. BL-WSe2 with different stacking angles were fabricated by stacking chemical vapour deposited monolayers and analysed using photoluminescence measurements in the temperature range 300-100 K. At reduced temperatures, several excitonic features were observed and the occurrences of these exitonic resonances were found to be stacking angle dependent. Our results indicate that by controlling the stacking angle, it is possible to excite or quench higher order excitations to tune the excitonic flux in optoelectronic devices. We attribute the presence/absence of multiple higher order excitons to the strength of interlayer coupling and doping effect from SiO2/Si substrate. Understanding interlayer excitations will help in engineering excitonic devices and give an insight into the physics of many-body dynamics.
Keywords:
2D transition metal dichalcogenides
bilayer WSe2
exitonic device
many-body dynamics
multiple exitonic resonances
stacking angle
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