1
Return

Strain-modulated light-heavy hole splitting and luminescence characteristics of InGaAsSb/AlGaAsSb quantum wells

delete2025-12-17
delete0
PRE
AI
T
Tongwei Yan
C
Chenglin Li
Y
Yu Hao
Y
Yong Wang *
Z
Zhengjun Fang *
D
Dengkui Wang *
刘
刘颖 (Ying Liu)
J
Jintao Hu
X
Xiaohu Liang
D
Dan Fang
J
Jinhua Li
X
Xuan Fang
DOI：10.1016/j.infrared.2025.106329delete
deleteOriginal
deleteOriginal request for help
deleteShare
deleteSave
Abstract

Abstract

En 中文
• Strain-modulated LH-HH splitting achieved in InGaAsSb/AlGaAsSb QWs by In-content. • Atomically sharp interfaces and crystallinity are demonstrated in QWs by HRXRD/HRTEM. • 2 ∼ 3 μm emission tunability demonstrated by strain-engineered band splitting. • Strain-mediated valence band modulation validated by experiment and k·p theory.

Journal

I
Infrared Physics and Technology
IF:
3.4
Papers:
5.8K
Citations:
1.2W

Organization

C
changchun university of science and technology
Scholars:
2.0K
Papers: 599
Citations: 1
V
vital optics technology co.,ltd
Scholars:
5
Papers: 1
Citations: 0
Cited Papers

Cited Papers

Citing Papers

Citing Papers