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Strong coupling in metal-semiconductor microcavities featuring Ge quantum wells: a perspective study
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DOI：10.1515/nanoph-2023-0730.png)
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Abstract
En 中文
In this work we theoretically investigate the possibility of observing strong coupling at mid-infrared frequencies within the group-IV semiconductor material platform. Our results show that the strong coupling condition is attainable in Ge/SiGe quantum wells integrated in hybrid metal-semiconductor microcavities, featuring a highly n-doped SiGe layer as one of the mirrors.
Keywords:
strong coupling
quantum wells
germanium
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