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Study of compensated Si in the context of the recycling of p-type substrates for n-type based solar cell architectures
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DOI：10.1016/j.solmat.2026.114574.png)
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Abstract
En 中文
• 2000s p-type mc-Si wafers successfully recrystallised into compensated n-type Czochralski silicon. • THz time-domain spectroscopy reveals majority carrier mobility values comparable to poly-Si reference. • P-diffusion gettering recovers carrier lifetime from tens of μs to several ms, compatible with high-efficiency architectures. • Recycled compensated silicon demonstrated viable feedstock for high-efficiency n-type solar cells.
Keywords:
Photovoltaics
Silicon
Recycling
Lifetime
Mobility
Efficiency
Compensation
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