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Sub-wavelength parallel patterning of As₂S₃ photosensitive glass by single-pulse femtosecond laser near-field enhancement
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DOI：10.1016/j.surfin.2026.110341.png)
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Abstract
En 中文
Chalcogenide glasses, particularly arsenic trisulfide (As₂S₃), have attracted significant attention for photonic applications due to their strong light-matter interaction and pronounced photoinduced effects. Their photosensitivity enables direct laser patterning and precise structural modification at micro- and nano-scale dimensions. Developing rapid, scalable, and cost-effective fabrication strategies for generation of sub-wavelength structures remains essential for advancing integrated photonics and functional optical surface engineering. In this work, we use a rapid and cost-effective fabrication method based on engineered optical mask to generate large-area periodic structures in As₂S₃ chalcogenide glass. Our method enables the formation of uniform sub-micrometer structures in a single processing step by exploiting the near-field enhancement of a single femtosecond laser pulse with 775 nm wavelength after propagation through an optical mask that defines the imprinted pattern. Structures formed by photoexpansion exhibited heights of approximately 20 nm and widths of about 320 nm, while the structures generated through photoevaporation reached depths of 100 nm and widths of around 1 µm. The imprinted pattern follows the optical mask configuration indicating the versatility of this method. The applied technique demonstrates a scalable and flexible method for the fabrication of periodic nanostructures in chalcogenide glasses and opens new opportunities for the rapid prototyping of optoelectronic applications.
Keywords:
Near-field laser processing
Photosensitive glass
Photoexpansion
Photoevaporation
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