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Subdiffraction Imaging of Carrier Dynamics in Halide Perovskite Semiconductors: Effects of Passivation; Morphology; and Ion Motion
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DOI：10.1021/acsnano.5c05425.png)
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Abstract
En 中文
We spatially resolve photocarrier dynamics in halide perovskites using time-resolved electrostatic force microscopy (trEFM) to map surface potential equilibration during photoexcitation. We present a unified interpretation of trEFM, which measures the evolution of the surface potential in response to photoexcitation. We show that trEFM measurements correlate with surface recombination velocity and carrier lifetimes, validated with time-resolved photoluminescence imaging. We further validate the interpretation of trEFM through wavelength- and intensity-dependent measurements and with drift-diffusion simulations. We compare several passivation agents, including (3-aminopropyl)trimethoxysilane (APTMS), [3-(2-aminoethylamino)propyl]trimethoxysilane (AEAPTMS), and phenethylammonium iodide (PEAI). The results reveal heterogeneity in surface potential equilibration times that correlates with perovskite film morphology and nanoscale variations in recombination dynamics following surface passivation. Not only do our results highlight the potential for further improvement of passivation strategies, but also the necessity of high spatial and temporal resolution methods, like trEFM, to evaluate next-generation semiconductors.
Keywords:
trEFM
halide perovskites
photocarrier dynamics
surface passivation
recombination velocity