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Surface potential-based analytical modeling of charge and drain current in asymmetric β-Ga2O3 nanomembrane MOSFETs
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DOI：10.1088/1361-6463/ae4fd7.png)
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Abstract
En 中文
This work presents, for the first time, surface potential based analytical models for charge density and drain current of an asymmetric beta-Ga2O3 nanomembrane MOSFET on SiO2/Si substrate. Individual mode specific physics-based analytical models have been developed for surface potential, charge density and drain current and the developed models are combined using mathematical transition functions to accurately capture device behavior for the entire range of device operation from accumulation to full depletion. Access regions of the MOSFET are modeled as current-dependent nonlinear resistors to capture the impact of access region depletion on its resistance. In addition to these, the impact of mobility degradation under the influence of electric field, device temperature rise, etc, has also been effectively taken care of in the developed drain current model. All of the developed models are extensively validated using both experimental data and simulation results obtained from a carefully calibrated technology computer-aided design (TCAD) simulator, covering a wide range of device parameters and bias conditions. Furthermore, the proposed models successfully pass the Gummel symmetry test. Owing to their generic nature, the developed models are also applicable to other thin-channel asymmetric MOSFETs on various insulator/semiconductor substrates, enabling accurate prediction of their electrical characteristics.
Keywords:
beta-Ga2O3
analytical model
drain current
Gummel symmetry
mobile charge density
nanomembrane
surface potential
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3.2
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2.6W
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4.9W
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