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Temperature-insensitive and low-loss single-mode silicon waveguide crossing covering all optical communication bands enabled by curved anisotropic metamaterial
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OA
AI
J
L
M
Y
Z
李
D
DOI：10.1515/nanoph-2023-0524.png)
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Abstract
En 中文
We propose two designs of low-loss and temperature-insensitive single-mode waveguide crossing on silicon-on-insulator (SOI) platform with 415-nm operation bandwidth covering all optical communication bands. Both designs are enabled by subwavelength grating (SWG) modeled as an anisotropic metamaterial. The initial design applies straight SWG as the lateral cladding of the waveguide crossing to minimize the refractive index contrast and reduce the insertion loss (IL), but needs a relatively long taper. An improved design is then proposed where the curved SWG is introduced to replace the straight SWG to decrease the taper length and improve the performance. The waveguide crossing with the improved design achieves a calculated maximum IL of 0.229 dB and maximum crosstalk of -35.6 dB over a 415-nm wavelength range from 1260 nm to 1675 nm. The proposed devices are fabricated and characterized. Measured results of the improved design show a maximum IL of 0.264 dB and maximum crosstalk of -30.9 dB over a 230-nm wavelength range including O-, C-, and L-bands, which accord well with the simulation. Low temperature sensitivity has also been demonstrated in both simulations and experiments.
Keywords:
silicon integrated photonics
anisotropic metamaterial
subwavelength grating
waveguide crossing
multi-band photonics device
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