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The Improved Quasi-Fermi-Level Separation of InGaAs Well-Cluster Composite Nanostructure for Ultra-Wide Tunable Lasers
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DOI：10.1109/JPHOT.2026.3659485.png)
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Abstract
En 中文
The development and application of tunable lasers have been constrained by a limited tuning range, primarily due to the small quasi-Fermi-level separation (Delta E-f) and low carrier band-filling levels. This study demonstrates an InGaAs/GaAs well-cluster composite (WCC) nanostructure, developed based on the indium-rich cluster effect. The Delta E-f and gain curves were obtained and analyzed by collecting photoluminescence (PL) spectra emitted from two 500-mu m-long multisection regions under varying carrier concentrations (9.0 x 10(17)-9.6 x 10(17) cm(-3)) and working temperatures (280-330 K). Compared to traditional InGaAs/GaAs quantum well structures under identical working conditions, the Delta E-f and gain bandwidth of the WCC structure were observed to be 1.08 and 5.3 times higher. This enhancement is attributed to the formation mechanism of the WCC structure, which contributes to a broader Delta E-f and expanded spectral characteristics. This configuration highlights the significant application potential of the WCC nanostructure in advancing tunable laser technology.
Keywords:
Indium
Strain
Laser theory
Surface topography
Surface morphology
Laser tuning
Surface treatment
Laser applications
Indium gallium arsenide
Measurement by laser beam
Indium-rich cluster
photoluminescence spectra
quasi-Fermi-level separation
semiconductor laser
Journal
I
IF:
2.4
Papers:
194
Citations:
1.1W
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Cited Papers