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The M2 Phase of Free-Standing Ga-Doped VO2 Single Crystals Over Wide Temperature Ranges
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DOI：10.1002/apxr.202500235.png)
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Abstract
En 中文
For more than six decades, VO2 has been one of the most impressive electronic materials due to its spectacular insulator metal transition (IMT) close to room temperature, accompanied by a structural transition and significant changes in optical properties which provided a list of potential applications such as electrical and optical switches, electrical and optical memories, smart windows, neural devices and thermal actuators. Despite a comprehensive investigation effort invested by scientists and engineers, as of today, there is no useful device on sale made of VO2. The main cause is cracks induced by the large strain-stress developed upon cycling through IMT of clamped samples. Another weakness is the high sensitivity of VO2 to foreign cations and deviations from oxygen stoichiometry, which may induce multiple coexisting phases. To become useful in device technology, the phase diagram of doped VO2 should be adjusted to provide a wide range of temperatures below IMT in which the material is single-phase and not under strain or stress induced by the substrate and contacts. Low- current R(T), DC, and pulsed I-V measurements conducted on free-standing Ga-doped VO2 single crystals provided encouraging results and proved the advantage of Ga over, e.g., Al doping.
Keywords:
I-V characteristics
phase transitions
resistive switching
single crystals
vanadium dioxide
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IF:
2.8
Papers:
85
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482
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