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Theoretical study of Si-based ionic switch

delete2012-05-15
delete8
PRE
AI
T
Takashi Yamauchi *
M
Moon Young Yang
K
Katsumasa Kamiya
K
Kenji Shiraishi
T
Takashi Nakayama
DOI：10.1063/1.4718758delete
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Abstract

Abstract

En 中文
We studied the formation/dissolution of a silver (Ag) filament in a silicon (Si) layer through the first-principles calculations. We found these processes take place reversibly by switching the polarity of the bias voltage, bringing about the large resistance change of the Si layer. Furthermore, we developed a model to describe the current-voltage (I-V) characteristics for the Ag(electrode)/Si(electrolyte)/p-Si(electrode) switch device and analyzed the experimental result [S. H. Jo and W. Lu, Nano Lett. 8, 392 (2008)] in the case of using an amorphous Si(a-Si) layer as the electrolyte. It was suggested from the simulated results that dendritic Ag filaments with a fractal dimension of 1.6 are formed in the a-Si layer. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4718758]
Keywords:
DIFFUSION-LIMITED AGGREGATION
RESISTANCE
GROWTH
MEMORY
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Journal

Applied Physics Letters cover
Applied Physics Letters
IF:
3.6
Papers:
10.4W
Citations:
17.8W

Organization

C
Chiba University
Scholars:
1.5W
Papers: 1.1W
Citations: 1.0W
T
toshiba corporation
Scholars:
1.6K
Papers: 1.0K
Citations: 0
U
University of Tsukuba
Scholars:
1.8W
Papers: 1.5W
Citations: 1.7W
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