.png){kind=icon}
.png){kind=icon}
Return
Thermal stabilization enhancement of β-(AlxGa1-x)2O3/Ga2O3 HFET through incorporated AlN/Si3N4 heat spreader layer
.png){kind=icon}
PRE
AI
E
A
G
M
DOI：10.1007/s10825-026-02509-4.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
This study presents an innovative method for augmenting the performance of the beta-(AlxGa1-x)(2)O-3/Ga2O3 heterostructure field-effect transistor (HFET) by overlaying an AlN/Si3N4 bi-layer. Owing to its excellent thermal conductivity, the AlN film is a suitable contender for use as a heat spreader. The temperature of the device during operation is a crucial factor in minimizing damage and ensuring high-quality performance. This research compares the electrical characteristics of a conventional Si3N4 passivated HFET with a proposed one comprising AlN/Si3N4 bi-layer. For the suggested device a 14% lower quasi-steady state temperature is achieved. The device with AlN/Si3N4 layer as a heat spreader exhibits a transconductance peak of 78 mS/mm and a notable 64% increase in drain current compared to the Si3N4 passivated device. Furthermore, there is a significant 32% increment in cut-off frequency compared to the conventional passivated one.
Keywords:
(AlxGa1-x)(2)O-3/Ga2O3
AlN/Si3N4 bi-layer
HFET
Transconductance
Cut-off frequency
Journal
IF:
2.5
Papers:
132
Citations:
2.9K
Organization
Cited Papers