Thermally stimulated luminescence before and after radiation-thermal treatment for diamonds synthesized at high temperature and pressure in metal‑carbon systems

Victor Vins

doi:10.1016/j.diamond.2026.114014

Thermally stimulated luminescence before and after radiation-thermal treatment for diamonds synthesized at high temperature and pressure in metal‑carbon systems

2026-07-25

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Victor Vins *

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Alexander Yelisseyev

DOI：10.1016/j.diamond.2026.114014

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• Changes in the set of capture centers in HPHT diamonds during radiation-heat treatment have been identified. • Correlation between the parameters of deep centers and capture centers has been established. • Higher efficiency of defect recharging during X-ray irradiation of diamond has been shown (compared to UV). • Quenching of photo- and thermostimulated luminescence (PL, TSL) from donor nitrogen has been established in diamond. • Independence of TSL parameters from the growth system suggests that capture centers are intrinsic defects in diamonds.

Keywords:

Thermally stimulated luminescence

Charge carrier capture centers

Radiative recombination

C

A

NV

H3 centers

Thermally stimulated luminescence before and after radiation-thermal treatment for diamonds synthesized at high temperature and pressure in metal‑carbon systems

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