TID Effects on FD-SOI Nanoscale Transistors at Cryogenic Temperatures

doi:10.1109/TNS.2026.3661059

TID Effects on FD-SOI Nanoscale Transistors at Cryogenic Temperatures

2026-04-01

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Ivan Sanchez Esqueda *

DOI：10.1109/TNS.2026.3661059

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This work studies the impact of ionizing radiation on the electrical characteristics of fully depleted silicon-on-insulator (FD-SOI) transistors at cryogenic temperatures. We analyze the effects of radiation-induced defects beyond previously established and well-known voltage shifts to emphasize degradation of charge transport (mobility) and subthreshold behavior [subthreshold swing (SS)]. Notably, the effects on mobility and SS become increasingly pronounced at cryogenic temperatures. In analyzing mobility, a Landauer-based model is used to account for quasi-ballistic transport and the effect of series resistance in state-of-the-art nanoscale transistors. For SS, the contribution from band tail states, associated with SS saturation at cryogenic temperatures, is considered in the analysis. This enables accurate quantification of trap density and their (nonuniform) energy distribution based on simple current-voltage ( I - V ) measurements at deep cryogenic temperatures (e.g., <10 K).

Keywords:

Voltage measurement

Current measurement

Cryogenics

Degradation

Resistance

Semiconductor device measurement

Nanoscale devices

Threshold voltage

Scattering

Ions

Cryogenic CMOS

fully depleted silicon-on-insulator (FD-SOI)

mobility degradation

quasi-ballistic transport

subthreshold swing (SS) saturation

total ionizing dose (TID)

TID Effects on FD-SOI Nanoscale Transistors at Cryogenic Temperatures

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