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Titanium-Doped Cu2O Thin Films: Oxide Alloying Versus Phase Separation
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DOI：10.1007/s11244-026-02326-w.png)
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Abstract
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Reactive Ti/Cu co-deposition onto Pt(111) in 50 mbar O2 is investigated with X-ray photoelectron spectroscopy (XPS), electron diffraction (LEED) and low-temperature scanning tunneling microscopy (STM). While as-grown films develop homogenous Ti/Cu/O mixtures without crystalline order, already moderate oxygen annealing at 560 K initiates a massive phase separation into surface TiO2 and interface Cu2O layers. At low Ti content, Ti decorates the nano-pyramidal reconstruction of the Cu2O(111) surface, replacing the regular Cu4O pyramids with TiOx units. At higher concentration, raft-like TiO2 crystallites, exposing a (4 × 2) added-row reconstruction, grow on top of the Cu2O films. A nearly equal Ti/Cu ratio triggers the formation of a pn-junction, made of n-type TiO2 at the surface and p-type Cu2O at the interface. Our work rationalizes the absence of Ti/Cu mixed oxide phases and discusses the driving forces for phase separation into the binary oxide parents.
Keywords:
Oxide mixing
Phase separation
Cuprous oxide
Titanium dioxide
Thin films
Scanning tunneling microscopy
Photoelectron spectroscopy
Oxide heterojunctions
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