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TlSe-Type Solid Solution for Stabilizing Low-Valent Indium(I) and Modulation of its Electronic Structure
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DOI：10.1016/j.solidstatesciences.2026.108328.png)
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Abstract
En 中文
• Reactive boron-tellurium mixture method for crystal growth. • Stabilization of the rare In(I) cation in a solid solution with the Na cation. • Low-dimensional metal telluride with the TlSe-type structure. • Small bandgap semiconductors with tunable electronic structures.
Keywords:
Boron-tellurium mixture
In(I) cation stabilization
TlSe-type structure
Low-dimensional metal telluride
Tunable electronic structure
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3.3
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6.0K
Citations:
9.2K
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