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Transistor Modeling
DOI:10.1109/MMM.2013.2248593.png)
Abstract
En
Keywords:
SIGNAL EQUIVALENT-CIRCUIT
ELECTRON-MOBILITY TRANSISTORS
INTERFACIAL GATE RESISTANCE
FIELD-EFFECT TRANSISTORS
PARAMETER-EXTRACTION
HEMTS
ALGORITHM
ELEMENTS
DEVICES
SILICON
Journal
IF:
2.6
Papers:
3.2K
Citations:
3.1K
Organization
Cited Papers
Resonance-Raman spectroscopy of tris(1,2-dithiolene) complexes of vanadium, molybdenum, and tungsten

