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Trap-State-Driven Photoresponse in Sn-Doped GaOOH Photodetectors
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DOI：10.1016/j.ceramint.2026.08.060.png)
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Abstract
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Sn-doped GaOOH optical sensors grown on indium tin oxide-coated glass (ITO/glass) substrate exhibit trap-dominated photoresponse, with the Sn-GaOOH/ITO contact maintaining a nearly constant Schottky barrier height (0.78-0.80 eV) at different Sn concentrations. The nonlinear current-voltage characteristics (I ∝ Vα) indicate trap-controlled transport influenced by Sn incorporation. Under dark conditions, α increases with bias from 0.21 to 2.42, reflecting a transition from limited carrier injection to strongly trap-dominated conduction. Under ultraviolet-C (UVC) illumination, additional transport regimes emerge with reduced α at higher bias, suggesting partial filling of trap states by photogenerated carriers and a consequent weakening of trap-limited transport. Consistently, the photocurrent exhibits sublinear dependence on light intensity (Iph ∝ Pβ, β ≈ 0.86), suggesting trap-assisted recombination. Under 254 nm illumination, a photocurrent of ∼1.26 μA is achieved, with stable switching and fast response (rise/fall times of 0.16/0.23 s). The device delivers a responsivity of 4.92 mA/W and an external quantum efficiency (EQE) of 2.4%, which compares favorably with previously reported GaOOH-based photodetectors measured under similar conditions. These findings underscore the central role of trap states in governing the photoresponse of GaOOH systems.
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