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Ultra-thin superlattice-like infrared transparent conductors designed via stacking-sequence engineering of sub-nanometer quintuple layers/bilayers
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DOI：10.1016/j.mtphys.2026.102103.png)
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Abstract
En 中文
Due to the coexistence of carrier transport and carrier absorption, it is difficult to achieve a synergistic effect of infrared transparency and conductivity in single-layer materials. The conventional approach to realize optoelectronic synergy involves stacking oxide and metal layers, each tens-of-nanometers thick, as transparent and conductive unit, respectively. However, excessive thickness leads to severe carrier absorption. Unlike traditional tens-of-nanometer-thick unit layers, this study utilizes sub-nanometer thin atomic layers to construct both transparent and conductive units. As a proof of concept, Bi-Bi bilayer (BL) and Te-Bi-Te-Bi-Te quintuple layer (QL) of bismuth telluride were selected to construct [QL-QL-QL] as the transparent unit and [QL-BL-QL] as the conductive unit. A series of ultra-thin superlattice-like films with a thickness of only 10 nm were fabricated by designing stacking sequences. The optimal sample achieved the integration of DC conductivity (σdc) of 5376 S·cm-1 and infrared transmittance (TIR) of 84%, and these films also demonstrated a wide range of optoelectronic property coverage (Δσdc > 2800 S·cm-1, ΔTIR > 35%). This work overturns the traditional thick film stacking approach, introducing a new method for optimizing infrared transparency and carrier transport through sub-nanometer atomic layer stacking, and providing a class of infrared transparent conductive films with the potential to be epitaxially grown to wafer-level size.
Keywords:
Infrared transparency
Carrier transport
Sub-nanometer atomic layers
Superlattice-like films
Transparent conductive films
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