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Unveiling chemical and physical bulk defects in ultrathin indium oxide transistors with yttrium oxide capping via nanoscale channel thickness modulation
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DOI：10.1016/j.matdes.2025.115410.png)
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Abstract
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• Nanoscale thickness control clarifies bulk defect roles in ultrathin oxide TFTs. • Thickness-dependent defect properties systematically elucidated in ultrathin InOX. • Structural disorder and defect chemistry linked to bias stability in oxide TFTs. • Optimized 4.5-nm channel enables reliable, enhancement-mode oxide TFT operation.
Keywords:
Thin-film transistors
Ultrathin indium oxide
Bulk defects
Channel thickness
Positive bias instability
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