Using thin AZO layers coupled with SiNx:H as a way to decrease Indium consumption in SHJ cells and modules

doi:10.1016/j.solmat.2025.113977

Using thin AZO layers coupled with SiNx:H as a way to decrease Indium consumption in SHJ cells and modules

2025-09-24

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DOI：10.1016/j.solmat.2025.113977

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• Thin AZO layers with a SiN:H capping were tested on both sides of SHJ cells and pushed to module integration for DH tests. •Efficiency in the same range as the reference were reached with front AZO layers as thin as 30 nm (22.88 %) thanks to the use of nanocrystalline selective layers. •Higher sensitivity to interconnexion/lamination processes for cells using uncapped AZO layers, resulting in FF losses. •Lower DH resistance for modules using thin front side AZO layers, and worse results due to the use of SiN:H capping layers. •Good DH reliability for modules using cells with rear side AZO layers, and improved reliability with 10 nm ITO capping.

Using thin AZO layers coupled with SiNx:H as a way to decrease Indium consumption in SHJ cells and modules

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