Variation-Aware SRAM Cell Optimization Using Deep Neural Network-Based Sensitivity Analysis

doi:10.1109/TCSI.2021.3052985

Variation-Aware SRAM Cell Optimization Using Deep Neural Network-Based Sensitivity Analysis

2021-04-01

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DOI：10.1109/TCSI.2021.3052985

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Under process, voltage, and temperature variations, SRAM cell stability largely fluctuates from the nominal value. In the design step, SRAM cell optimization while ignoring the fluctuation induces the yield loss for the stability. Variation-aware optimization of an SRAM cell can prevent the yield loss problem by considering the mean and variance of SRAM cell stability when finding optimal design parameters. This paper proposes a novel SRAM optimization method that uses a deep neural network (DNN). Multiple DNNs from ensemble techniques represent the mean and variance of SRAM cell stability for the nominal design parameters. Subsequent sensitivity analysis of DNN extracts the K design parameters that have the most dominant effects on the mean and variance of SRAM cell stability. Then multidimensional optimization is used to find the optimal values of these K parameters to maximize the mean stability while minimizing its variance. The proposed method achieved an average of 2% error compared to MC simulation. The proposed optimization method takes only 561 s to provide the most optimal design parameter values of an SRAM cell.

Keywords:

Static random access memory

read static noise margin (RSNM)

statistical analysis

sensitivity analysis

Variation-Aware SRAM Cell Optimization Using Deep Neural Network-Based Sensitivity Analysis

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