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Versatile memristor for memory and neuromorphic computing
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DOI：10.1039/d1nh00481f.png)
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Abstract
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The memristor is a promising candidate to implement high-density memory and neuromorphic computing. Based on the characteristic retention time, memristors are classified into volatile and non-volatile types. However, a single memristor generally provides a specific function based on electronic performances, which poses roadblocks for further developing novel circuits. Versatile memristors exhibiting both volatile and non-volatile properties can provide multiple functions covering non-volatile memory and neuromorphic computing. In this work, a versatile memristor with volatile/non-volatile bifunctional properties was developed. Non-volatile functionality with a storage window of 4.0 x 10(5) was obtained. Meanwhile, the device can provide threshold volatile functionalities with a storage window of 7.0 x 10(4) and a rectification ratio of 4.0 x 10(4). The leaky integrate-and-fire (LIF) neuron model and artificial synapse based on the device have been studied. Such a versatile memristor enables non-volatile memory, selectors, artificial neurons, and artificial synapses, which will provide advantages regarding circuit simplification, fabrication processes, and manufacturing costs.
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CONDUCTIVE FILAMENT
CUINSE2
THRESHOLD
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