.png){kind=icon}
.png){kind=icon}
Return
Vertical gate-defined double quantum dot in a strained germanium double quantum well
.png){kind=icon}
OA
AI
DOI：10.1103/PhysRevApplied.20.054035.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited to quantum dots defined in a single plane. Here, we propose to advance beyond planar systems by exploiting heterostructures with multiple quantum wells. We demonstrate the operation of a gate-defined double quantum dot in a strained germanium double quantum well, where both quantum dots are tunnel coupled to both reservoirs and parallel transport occurs. We analyze the capacitive coupling to nearby gates and find both quantum dots to be accumulated under the central plunger gate. We extract their position and size, from which we conclude that the double quantum dots are vertically stacked in the two quantum wells. We discuss the challenges and opportunities of multilayer devices and outline some potential applications in quantum computing and quantum simulation.
Keywords:
SILICON
QUBIT
Journal
IF:
4.4
Papers:
7.1K
Citations:
2.8W