.png){kind=icon}
Return
Vertical Interconnection Technology for RF MicroSystem Packaging
.png){kind=icon}
OA
AI
DOI：10.3390/ma17143425.png)
.png){kind=icon}
.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
In this work, 1.5-level interconnections of RF microsystems with good RF performance, integration process compatibility, and high reliability are developed to meet the future demand for wireless communication microsystems in the millimeter wave band. Numerical models of 1.5-level interconnections based on solder balls with different diameters are established and analyzed using HFSS. The optimized structure parameters of 0.2 mm diameter Sn96.5Ag3Cu0.5 (SAC305) solder balls and 0.3 mm diameter Sn63Pb37 solder balls are selected for the interconnection between glass micro substrates and silicon micro substrates and between silicon micro substrates and HTCC substrates, respectively. Integration process parameters of the vertical interconnection are optimized. The micro substrate interconnection samples manufactured based on optimized integration methods and parameters show high reliability.
Keywords:
vertical interconnection
RF microsystem
system in package
AI Summary
Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.
Journal
IF:
3.2
Papers:
5.7W
Citations:
15.1W
Organization
Cited Papers
Simulations of Nanosecond Pulsed Plasmas in Supersonic Flows for Combustion Applications.png)
AIAA Journal
AIAA JournalIF0
PREAI
ShareSaveAnalysis of Electromagnetic Scattering from Graphene with Volume Surface Integral Equation Method
PREAI
ShareSave
ShareSaveShareSave
View more