.png){kind=icon}
.png){kind=icon}
Return
Waveguide-coupled detector in zero-change complementary metal-oxide-semiconductor
.png){kind=icon}
OA
AI
DOI：10.1063/1.4927393.png)
.png){kind=icon}
.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
We report a waveguide-coupled photodetector realized in a standard CMOS foundry without requiring changes to the process flow (zero-change CMOS). The photodetector exploits carrier generation in the silicon-germanium normally utilized as stressor in pFETs. The measured responsivity and 3 dB bandwidth are of 0.023 A/W at a wavelength of 1180 nm and 32 GHz at -1 V bias (18 GHz at 0 V bias). The dark current is less than 10 pA and the dynamic range is larger than 60 dB. (C) 2015 AIP Publishing LLC.
Keywords:
TECHNOLOGY
AI Summary
Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.
Journal
IF:
3.6
Papers:
10.4W
Citations:
17.8W
Organization
No organization information available