Not logged inHigh-density, nonvolatile SRAM using monolithic 3D integration of InGaZnO thin-film transistors and Hf0.5Zr0.5O2-based ferroelectric capacitors
Liu, Qihan; Li, Yu; Liu, Liwei; Jiang, Hao; Zhu, Haozhe; Chen, Zexing; Yang, Yang; Si, Mengwei; Li, Can; Lin, Peng; Wei, Yingfen; Liu, Qi .png)
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SaveShare Save Interface-Modulated Antiferroelectric-to-Ferroelectric-Like Transition in Ultrathin Hf0.5Zr0.5O2 FilmsLu, Haoyu; Li, Yu; Han, Jiyuan; Geng, Huangfu; Feng, Guan; Yin, Shuaishuai; Wei, Yingfen; Jiang, Hao; Zheng, Changlin; Liu, Qi; Liu, Ming Share Save Multi-state nonvolatile capacitances in HfO2-based ferroelectric capacitor for neuromorphic computingWu, Shuyu; Zhang, Xumeng; Cao, Rongrong; Zhou, Keji; Lu, Jikai; Li, Chao; Yang, Yang; Shang, Dashan; Wei, Yingfen; Jiang, Hao; Liu, Qi Share Save Share Save Share Save Share Save Strain Relaxation in 2D/2D and 2D/3D Systems: Highly Textured Mica/Bi2Te3, Sb2Te3/Bi2Te3, and Bi2Te3/GeTe HeterostructuresZhang, Heng; Yimam, Daniel T.; de Graaf, Sytze; Momand, Jamo; Vermeulen, Paul A.; Wei, Yingfen; Noheda, Beatriz; Kooi, Bart J. Share Save Share Save Magnetic Tunnel Junctions Based on Ferroelectric Hf0.5Zr0.5O2 Tunnel BarriersWei, Yingfen; Matzen, Sylvia; Maroutian, Thomas; Agnus, Guillaume; Salverda, Mart; Nukala, Pavan; Chen, Qihong; Ye, Jianting; Lecoeur, Philippe; Noheda, Beatriz Share Save Share Save A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin filmsWei, Yingfen; Nukala, Pavan; Salverda, Mart; Matzen, Sylvia; Zhao, Hong Jian; Momand, Jamo; Everhardt, Arnoud S.; Agnus, Guillaume; Blake, Graeme R.; Lecoeur, Philippe; Kooi, Bart J.; Iniguez, Jorge; Dkhil, Brahim; Noheda, Beatriz Share Save 
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