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Changhyun Kim

Samsung Electronics Co., Ltd.

4H-index
10Paper Count
499Citation Count
Published Papers 3
Publication Date
Gate structuring on n-type bilayer MoS2 field-effect transistors for ultrahigh current density
err2026-01-09
err0
PREAI
errJunyoung Kwon; Kyoung Yeon Kim; Dongwon Jang; Min Seok Yoo; Alum Jung; Dong-Su Ko; Yoonhoo Ha; Huije Ryu; Woon Ih Choi; Yeonchoo Cho; Changhyun Kim; Eunji Yang; Eun Kyu Lee; Chang-Seok Lee; Sang Won Kim; Uihui Kwon; Dae Sin Kim; Sung Kyu Lim; Kyung-Eun Byun; Minsu Seol; Jeehwan Kim
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The future of two-dimensional semiconductors beyond Moore's law
err2024-07-01
err15
PREAI
errKim, Ki Seok; Kwon, Junyoung; Ryu, Huije; Kim, Changhyun; Kim, Hyunseok; Lee, Eun-Kyu; Lee, Doyoon; Seo, Seunghwan; Han, Ne Myo; Suh, Jun Min; Kim, Jekyung; Song, Min-Kyu; Lee, Sangho; Seol, Minsu; Kim, Jeehwan
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In-sensor optoelectronic computing using electrostatically doped silicon
err2022-08-23
err68
errOAAI
errJang, Houk; Hinton, Henry; Jung, Woo-Bin; Lee, Min-Hyun; Kim, Changhyun; Park, Min; Lee, Seoung-Ki; Park, Seongjun; Ham, Donhee
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