Brian D. Hoskins - Publications, H-index & Citations

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Brian D. Hoskins

National Institute of Standards and Technology

18H-index

68Paper Count

4.7KCitation Count

Published Papers 22

Publication Date

ReRAM/CMOS Array Integration and Characterization via Design of Experiments

Advanced Electronic Materials

IF5.3

2025-07-21

OAAI

Imtiaz Hossen; William A. Borders; Advait Madhavan; Shweta Joshi; Patrick M. Braganca; Jabez J. McClelland; Brian D. Hoskins; Gina C. Adam

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Measurement-driven neural-network training for integrated magnetic tunnel

PHYSICAL REVIEW APPLIED

IF4.4

2024-05-14

OAAI

Borders, William A.; Madhavan, Advait; Daniels, Matthew W.; Georgiou, Vasileia; Lueker-Boden, Martin; Santos, Tiffany S.; Braganca, Patrick M.; Stiles, Mark D.; McClelland, Jabez J.; Hoskins, Brian D.

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Implementation of a Binary Neural Network on a Passive Array of Magnetic Tunnel Junctions

PHYSICAL REVIEW APPLIED

IF4.4

2022-07-18

OAAI

Goodwill, Jonathan M.; Prasad, Nitin; Hoskins, Brian D.; Daniels, Matthew W.; Madhavan, Advait; Wan, Lei; Santos, Tiffany S.; Tran, Michael; Katine, Jordan A.; Braganca, Patrick M.; Stiles, Mark D.; McClelland, Jabez J.

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Gradient Decomposition Methods for Training Neural Networks With Non-ideal Synaptic Devices

FRONTIERS IN NEUROSCIENCE

IF3.2

2021-11-22

OAAI

Zhao, Junyun; Huang, Siyuan; Yousuf, Osama; Gao, Yutong; Hoskins, Brian D.; Adam, Gina C.

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Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications

APPLIED PHYSICS LETTERS

IF3.6

2021-07-29

OAAI

Zaslavsky, A.; Richter, C. A.; Shrestha, P. R.; Hoskins, B. D.; Le, S. T.; Madhavan, A.; McClelland, J. J.

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Room-temperature skyrmions in strain-engineered FeGe thin films

PHYSICAL REVIEW B

IF3.7

2020-06-08

PREAI

Budhathoki, Sujan; Sapkota, Arjun; Law, Ka Ming; Ranjit, Smriti; Nepal, Bhuwan; Hoskins, Brian D.; Thind, Arashdeep Singh; Borisevich, Albina Y.; Jamer, Michelle E.; Anderson, Travis J.; Koehler, Andrew D.; Hobart, Karl D.; Stephen, Gregory M.; Heiman, Don; Mewes, Tim; Mishra, Rohan; Gallagher, James C.; Hauser, Adam J.

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Nanoscale Mapping of the Double Layer Potential at the Graphene- Electrolyte Interface

NANO LETTERS

IF9.1

2020-01-28

PREAI

Strelcov, Evgheni; Arble, Christopher; Guo, Hongxuan; Hoskins, Brian D.; Yulaev, Alexander; Vlassiouk, Ivan V.; Zhitenev, Nikolai B.; Tselev, Alexander; Kolmakov, Andrei

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Streaming Batch Eigenupdates for Hardware Neural Networks

FRONTIERS IN NEUROSCIENCE

IF3.2

2019-08-06

OAAI

Hoskins, Brian D.; Daniels, Matthew W.; Huang, Siyuan; Madhavan, Advait; Adam, Gina C.; Zhitenev, Nikolai; McClelland, Jabez J.; Stiles, Mark D.

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Spontaneous current constriction in threshold switching devices

NATURE COMMUNICATIONS

IF15.7

2019-04-09

OAAI

Goodwill, Jonathan M.; Ramer, Georg; Li, Dasheng; Hoskins, Brian D.; Pavlidis, Georges; McClelland, Jabez J.; Centrone, Andrea; Bain, James A.; Skowronski, Marek

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Scalable Method to Find the Shortest Path in a Graph with Circuits of Memristors

PHYSICAL REVIEW APPLIED

IF4.4

2018-12-14

OAAI

Mizrahi, Alice; Marsh, Thomas; Hoskins, Brian; Stiles, M. D.

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Research Update: Electron beam-based metrology after CMOS

APL MATERIALS

IF4.5

2018-07-19

OAAI

Liddle, J. A.; Hoskins, B. D.; Vladar, A. E.; Villarrubia, J. S.

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Hardware-intrinsic security primitives enabled by analogue state and nonlinear conductance variations in integrated memristors

NATURE ELECTRONICS

IF40.9

2018-03-09

152

PREAI

Nili, Hussein; Adam, Gina C.; Hoskins, Brian; Prezioso, Mirko; Kim, Jeeson; Mahmoodi, M. Reza; Bayat, Farnood Merrikh; Kavehei, Omid; Strukov, Dmitri B.

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Stateful characterization of resistive switching TiO2 with electron beam induced currents (vol 8, 1972, 2017)

NATURE COMMUNICATIONS

IF15.7

2018-01-24

OAAI

Hoskins, Brian D.; Adam, Gina C.; Strelcov, Evgheni; Zhitenev, Nikolai; Kolmakov, Andrei; Strukov, Dmitri B.; McClelland, Jabez J.

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Stateful characterization of resistive switching TiO2 with electron beam induced currents

NATURE COMMUNICATIONS

IF15.7

2017-12-07

OAAI

Hoskins, Brian D.; Adam, Gina C.; Strelcov, Evgheni; Zhitenev, Nikolai; Kolmakov, Andrei; Strukov, Dmitri B.; McClelland, Jabez J.

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A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit (vol 7, 42429, 2017)

SCIENTIFIC REPORTS

IF3.9

2017-07-27

OAAI

Chakrabarti, B.; Lastras-Montano, M. A.; Adam, G.; Prezioso, M.; Hoskins, B.; Payvand, M.; Madhavan, A.; Ghofrani, A.; Theogarajan, L.; Cheng, K. -T.; Strukov, D. B.

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A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit

SCIENTIFIC REPORTS

IF3.9

2017-02-14

OAAI

Chakrabarti, B.; Lastras-Montano, M. A.; Adam, G.; Prezioso, M.; Hoskins, B.; Cheng, K. -T.; Strukov, D. B.

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Optimized stateful material implication logic for three-dimensional data manipulation

NANO RESEARCH

IF9

2016-09-29

PREAI

Adam, Gina C.; Hoskins, Brian D.; Prezioso, Mirko; Strukov, Dmitri B.

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Self-Adaptive Spike-Time-Dependent Plasticity of Metal-Oxide Memristors

SCIENTIFIC REPORTS

IF3.9

2016-02-19

164

OAAI

Prezioso, M.; Bayat, F. Merrikh; Hoskins, B.; Likharev, K.; Strukov, D.

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Modeling and Experimental Demonstration of a Hopfield Network Analog-to-Digital Converter with Hybrid CMOS/Memristor Circuits

FRONTIERS IN NEUROSCIENCE

IF3.2

2015-12-24

OAAI

Guo, Xinjie; Merrikh-Bayat, Farnood; Gao, Ligang; Hoskins, Brian D.; Alibart, Fabien; Linares-Barranco, Bernabe; Theogarajan, Luke; Teuscher, Christof; Strukov, Dmitri B.

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Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions (vol 5, 3990, 2014)

NATURE COMMUNICATIONS

IF15.7

2015-12-07

OAAI

Mikheev, Evgeny; Hoskins, Brian D.; Strukov, Dmitri B.; Stemmer, Susanne

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Research Directions