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J

Jon F. Ihlefeld

University of Virginia

43H-index
336Paper Count
7.8KCitation Count
Published Papers 130
Publication Date
Thermal conductivity and optical phonon scattering of CMOS compatible aluminum nitride based ferroelectric thin films
err2026-09-11
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errOAAI
errSara Makarem; Ian Mercer; Saman Zare; Michael S. Lafferty; Thomas W. Pfeifer; William Hutchins; Daniel Hirt; Ethan A. Scott; Jon F. Ihlefeld; Susan Trolier-McKinstry; Jon-Paul Maria; Patrick E. Hopkins
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Robust Antiferroelectric Response in the Pbca Phase of Hafnium Zirconium Oxide via Aluminum Substitution
err2026-09-06
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errOAAI
errYong Kyu Choi; MinChul Kang; Tinsae Alem; Nicolas K. Lam; Andrea L. Watson; Kory Burns; Stephen J. McDonnell; Lin Zhou; Jon F. Ihlefeld
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Enhanced Ferroelectric Phase Formation via Local Structure Modification in the Pre-Crystalline State of Hafnium Zirconium Oxide Thin Films
err2026-09-02
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errOAAI
errNicolas K. Lam; Gerald R. Bejger; Waseem A. Wani; Kristina M. Holsgrove; Andrew N. Titus; Niyorjyoti Sharma; Shihao Wang; Keithen Orson; Megan K. Lenox; Liron Shvilberg; Yong Kyu Choi; Ian A. Brummel; Benjamin L. Aronson; Petra Reinke; Quentin Ramasse; Amit Kumar; Brian J. Rodriguez; Christina M. Rost; Jon F. Ihlefeld
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Electron Energy Loss as a Phase Identification Tool in Hafnium Zirconium Oxide Ferroelectrics
err2026-07-27
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errOAAI
errEce Gunay; Sebastian Calderon; Benjamin Aronson; Jon F Ihlefeld; Elizabeth Dickey
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Correlative Nanoscale Spectroscopy and Diffraction of Metastable Phases in Hf0.5Zr0.5O2
err2026-07-27
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errOAAI
errNooreen T Qureshi; Luke C Johnson; Jordan A Hachtel; Thomas E Beechem; Jon F Ihlefeld; Kory Burns
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Investigating Thermal Depolarization and Repolarization of Ferroelectric HZO with In Situ TEM and STEM EBIC
err2026-07-27
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errOAAI
errTristan P O’Neill; Yueyun Chen; Ho Leung Chan; Megan K Lenox; William A Hubbard; Jon F Ihlefeld; B C Regan
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Electrode Grains Template Ferroelectric Domains in a Hafnia-Based Capacitor
err2026-07-27
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errOAAI
errYueyun Chen; Tristan P O’Neill; Ho Leung Chan; Megan K Lenox; William A Hubbard; Jon F Ihlefeld; B C Regan
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Ferroelectric Dynamic-Field-Driven Nucleation and Growth Model for Predictive Materials-To-Circuit Co-Design
err2026-06-13
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errOAAI
errYi Liang; Soohyeon Kim; Tony Chiang; Megan K. Lenox; Ian Mercer; John J. Plombon; Jon-Paul Maria; Jon F. Ihlefeld; Wenhao Sun; Wei Lu; John T. Heron
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Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films
err2026-05-01
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errOAAI
errShvilberg, Liron; Pfeifer, Thomas W.; Zhou, Chuanzhen; Choi, Yong Kyu; Choe, Duk-Hyun; Hopkins, Patrick E.; Ihlefeld, Jon F.
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Nanoscale Phase Identification Using Two-Dimensional Pair Correlation Functions: A Case Study on Hafnium Oxide
err2025-10-01
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errOAAI
errCalderon, V. S.; Evans, Charles; Jaszewski, Samantha T.; Ihlefeld, Jon F.; Dickey, Elizabeth C.
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Environmental Control of Ferroelectricity in Hafnia Films
err2025-08-07
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errOAAI
errWaseem Ahmad Wani; Nicolas K. Lam; Kristina M. Holsgrove; Gerald Bejger; Tinsae Alem; Kory Burns; Stephen J. McDonnell; Christina M. Rost; Amit Kumar; Jon F. Ihlefeld; Brian J. Rodriguez
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Electrode Interface Effects in Hafnium Zirconium Oxide Ferroelectrics
err2025-07-25
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PREAI
errEce Gunay; Sebastian Calderon; Benjamin Aronson; Jon Ihlefeld; Elizabeth Dickey
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Annealing Optimization for HZO Thin Films with In-Situ STEM EBIC Characterization
err2025-07-25
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PREAI
errYueyun Chen; Ho Leung Chan; Tristan P O’Neill; Megan K Lenox; William A Hubbard; Jon F Ihlefeld; B C Regan
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Effect of Precursor Purge Time on Plasma-Enhanced Atomic Layer Deposition-Prepared Ferroelectric Hf0.5Zr0.5O2 Phase and Performance
err2025-05-14
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errOAAI
errChoi, YK; Holsgrove, K; Watson, A; Aronson, BL; Lenox, MK; Shvilberg, L; Zhou, CZ; Fields, SS; Wang, SH; McDonnell, SJ; Kumar, A; Ihlefeld, JF
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Modifications in the charge trap landscape in Hf0.5Zr0.5O2 as a function of oxygen vacancy concentration observed with photoemission electron microscopy
err2025-04-14
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PREAI
errVega, Fernando; Boehm, Alex; Kim, Andrew R.; Jaszewski, Samantha; Ohta, Taisuke; Ihlefeld, Jon; Beechem, Thomas
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Multistate resistance in TaN/(Hf,Zr)O2/Ta ferroelectric tunnel junctions
err2025-04-14
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errOAAI
errHenry, M. David; Stoltzfus, David; Lenox, Megan K.; Jaszewski, Samantha T.; Young, Travis; Ihlefeld, Jon F.
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Oxygen diffusion coefficients in ferroelectric hafnium zirconium oxide thin films(vol 124, 252905 , 2024)
err2025-01-24
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PREAI
errShvilberg, Liron; Zhou, Chuanzhen; Lenox, Megan K.; Aronson, Benjamin L.; Lam, Nicolas K.; Jaszewski, Samantha T.; Opila, Elizabeth J.; Ihlefeld, Jon F.
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Geometric effects in the measurement of the remanent ferroelectric polarization at the nanoscale
err2025-01-14
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PREAI
errChiang, Tony; Lenox, Megan K.; Ma, Tao; Ihlefeld, Jon F.; Heron, John T.
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Conductive filament formation in the failure of Hf0.5Zr0.5O2 ferroelectric capacitors
err2025-01-13
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errOAAI
errWebb, Matthew; Chiang, Tony; Lenox, Megan K.; Gray, Jordan; Ma, Tao; Ihlefeld, Jon F.; Heron, John T.
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Electrode Elastic Modulus as the Dominant Factor in the Capping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films
err2024-12-03
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PREAI
errLenox, Megan K.; Islam, Md Rafiqul; Hoque, Md Shafkat Bin; Skidmore, Chloe H.; Salanova, Alejandro; Fields, Shelby S.; Jaszewski, Samantha T.; Maria, Jon-Paul; Hopkins, Patrick E.; Ihlefeld, Jon F.
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