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C

Chris G. Van de Walle

University of California System

123H-index
771Paper Count
7.2WCitation Count
Published Papers 252
Publication Date
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Characterization of chromium impurities in β-Ga2O3
errJOURNAL OF APPLIED PHYSICS
IF2.5
err2025-03-14
err1
errOAAI
errTuriansky, Mark E.; Mu, Sai; Razinkovas, Lukas; Parto, Kamyar; Patel, Sahil D.; Doan, Sean; Pokharel, Ganesh; Alvarado, Steven J. Gomez; Wilson, Stephen D.; Moody, Galan; van de Walle, Chris G.
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Oxygen impurities in AlN and their impact on optical absorption
errAPPLIED PHYSICS LETTERS
IF3.6
err2025-02-11
err1
PREAI
errYan, Qimin; Lyons, John L.; Gordon, Luke; Janotti, Anderson; van de Walle, Chris G.
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Towards higher electro-optic response in AlScN
errAPPLIED PHYSICS LETTERS
IF3.6
err2025-01-27
err0
PREAI
errWang, Haochen; Mu, Sai; van de Walle, Chris G.
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First-principles study of proton migration in indium oxide
errPHYSICAL REVIEW B
IF3.7
err2024-12-23
err1
PREAI
errFranckel, Mathilde L. D.; Turiansky, Mark E.; Waldhoer, Dominic; van de Walle, Chris G.
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errSave
Point defects and doping in wurtzite LaN
errPHYSICAL REVIEW B
IF3.7
err2024-11-26
err0
PREAI
errRowberg, A. J. E.; Mu, S.; van de Walle, C. G.
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errSave
Defect Properties, Anion Ordering, and Photochromic Mechanism in Yttrium Oxyhydride
errJOURNAL OF PHYSICAL CHEMISTRY C
IF3.2
err2024-11-18
err0
PREAI
errRowberg, Andrew J. E.; van de Walle, Chris G.
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Unveiling the Pockels coefficient of ferroelectric nitride ScAlN
errNATURE COMMUNICATIONS
IF15.7
err2024-11-04
err0
errOAAI
errYang, Guangcanlan; Wang, Haochen; Mu, Sai; Xie, Hao; Wang, Tyler; He, Chengxing; Shen, Mohan; Liu, Mengxia; van de Walle, Chris G.; Tang, Hong X.
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Transition-Metal-Related Quantum Emitters in Wurtzite AlN and GaN
errACS NANO
IF16
err2024-10-12
err1
errOAAI
errCzelej, Kamil; Lambert, M. Rey; Turiansky, Mark E.; Koshevarnikov, Aleksei; Mu, Sai; van de Walle, Chris G.
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Intrinsic origins of broad luminescence in melt-grown ZnGa2O4 single crystals
errPHYSICAL REVIEW MATERIALS
IF3.4
err2024-09-18
err2
PREAI
errFrodason, Ymir K.; Galeckas, Augustinas; Olsen, Vegard S.; Weiser, Philip M.; Galazka, Zbigniew; Van de Walle, Chris G.; Vines, Lasse
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Scandium-based point defect in AlN for quantum information processing
errPHYSICAL REVIEW B
IF3.7
err2024-09-09
err2
PREAI
errCzelej, Kamil; Turiansky, Mark E.; Mu, Sai; van de Walle, Chris G.
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Optical lineshapes for orbital singlet to doublet transitions in a dynamical Jahn-Teller system: The NiV- center in diamond
errPHYSICAL REVIEW B
IF3.7
err2024-08-12
err0
errOAAI
errSilkinis, Rokas; Zalandauskas, Vytautas; Thiering, Gergo; Gali, Adam; Van de Walle, Chris G.; Alkauskas, Audrius; Razinkovas, Lukas
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Clarification of the spontaneous polarization direction in crystals with wurtzite structure
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-07-22
err3
PREAI
errFichtner, Simon; Yassine, Mohamed; Van de Walle, Chris G.; Ambacher, Oliver
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Carrier confinement and alloy disorder exacerbate Auger-Meitner recombination in AlGaN ultraviolet light-emitting diodes
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-07-11
err2
errOAAI
errPant, Nick; Bushick, Kyle; McAllister, Andrew; Lee, Woncheol; Van de Walle, Chris G.; Kioupakis, Emmanouil
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errSave
First-principles studies of Schottky barriers and tunneling properties at Al(111)/Si(111) and CoSi2(111)/Si(111) interfaces
errPHYSICAL REVIEW B
IF3.7
err2024-07-10
err1
errOAAI
errNangoi, J. K.; Palmstrom, C. J.; Van de Walle, C. G.
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errSave
Rational design of efficient defect-based quantum emitters
errAPL PHOTONICS
IF5.3
err2024-06-26
err8
errOAAI
errTuriansky, Mark E.; Parto, Kamyar; Moody, Galan; Van de Walle, Chris G.
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High-field / high-frequency electron spin resonances of Fe-doped β-Ga 2 O 3 by terahertz generalized ellipsometry: Monoclinic symmetry effects
errPHYSICAL REVIEW B
IF3.7
err2024-06-13
err3
errOAAI
errRichter, Steffen; Knight, Sean; Bulancea-Lindvall, Oscar; Mu, Sai; Kuehne, Philipp; Stokey, Megan; Ruder, Alexander; Rindert, Viktor; Ivady, Viktor; Abrikosov, Igor A.; Van de Walle, Chris G.; Schubert, Mathias; Darakchieva, Vanya
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Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies
errAPL MATERIALS
IF4.5
err2023-11-07
err9
errOAAI
errGhadi, Hemant; Mcglone, Joe F.; Cornuelle, Evan; Senckowski, Alexander; Sharma, Shivam; Wong, Man Hoi; Singisetti, Uttam; Frodason, Ymir Kalmann; Peelaers, Hartwin; Lyons, John L.; Varley, Joel B.; van de Walle, Chris G.; Arehart, Aaron; Ringel, Steven A.
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First-principles approach to closing the 10-100 eV gap for charge-carrier thermalization in semiconductors
errPHYSICAL REVIEW B
IF3.7
err2023-10-19
err2
errOAAI
errNielsen, Dallin O.; Van de Walle, Chris G.; Pantelides, Sokrates T.; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Fischetti, Massimo, V
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Defect identification based on first-principles calculations for deep level transient spectroscopy (vol 113, 192106, 2018)
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-08-14
err0
errOAAI
errWickramaratne, Darshana; Dreyer, Cyrus E.; Monserrat, Bartomeu; Shen, Jimmy-Xuan; Lyons, John L.; Alkauskas, Audrius; van de Walle, Chris. G.
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First-Principles Study of Twin Boundaries and Stacking Faults in β-Ga2O3
errADVANCED MATERIALS INTERFACES
IF4.4
err2023-07-23
err10
errOAAI
errWang, Mengen; Mu, Sai; Speck, James S.; van de Walle, Chris G.
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Research Directions

No research directions
Co-authors
Cooperation Journals
M
Matthias Scheffler
H-index: 133 · Papers: 1.0K
G
Georg Kresse
H-index: 128 · Papers: 503
S
Steven P. DenBaars
H-index: 126 · Papers: 1.5K
J
John E. Bowers
H-index: 126 · Papers: 2.3K
D
David A. Muller
H-index: 125 · Papers: 1.1K
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