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Nanosheets Derived from Titanium Diboride as Gate Insulators for Atomically Thin Transistors Rasyotra, A; Das, M; Sen, D; Zhang, ZY; Pannone, A; Chen, C; Redwing, JM; Yang, Y; Jasuja, K; Das, S Share Save
High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials (NOV, 10.1038/s41928-024-01265-2, 2024) Das, Mayukh; Sen, Dipanjan; Sakib, Najam U.; Ravichandran, Harikrishnan; Sun, Yongwen; Zhang, Zhiyu; Ghosh, Subir; Venkatram, Pranavram; Radhakrishnan, Shiva Subbulakshmi; Sredenschek, Alexander; Yu, Zhuohang; Sarkar, Kalyan Jyoti; Sadaf, Muhtasim Ul Karim; Meganathan, Kalaiarasan; Pannone, Andrew; Han, Ying; Sanchez, David Emanuel; Somvanshi, Divya; Sofer, Zdenek; Terrones, Mauricio; Yang, Yang; Das, Saptarshi Share Save
High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials Das, Mayukh; Sen, Dipanjan; Sakib, Najam U.; Ravichandran, Harikrishnan; Sun, Yongwen; Zhang, Zhiyu; Ghosh, Subir; Venkatram, Pranavram; Subbulakshmi Radhakrishnan, Shiva; Sredenschek, Alexander; Yu, Zhuohang; Sarkar, Kalyan Jyoti; Sadaf, Muhtasim Ul Karim; Meganathan, Kalaiarasan; Pannone, Andrew; Han, Ying; Sanchez, David Emanuel; Somvanshi, Divya; Sofer, Zdenek; Terrones, Mauricio; Yang, Yang; Das, Saptarshi Share Save
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