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Albert Chin

rzhanov institute of semiconductor physics, siberian branch, russian academy of sciences

51H-index
651Paper Count
1.1WCitation Count
Published Papers 75
Publication Date
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SnO Nanosheet Transistor with Remarkably High Hole Effective Mobility and More than Six Orders of Magnitude On-Current/Off-Current
errNANOMATERIALS
IF4.3
err2025-04-23
err0
errOAAI
errChen, Kuan-Chieh; Wu, Jiancheng; Pooja, Pheiroijam; Chin, Albert
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Identification and Validation of Cyclic Peptides with Mucin-Selective, Location-Specific Binding in the Gastrointestinal Tract
errACS NANO
IF16
err2025-04-11
err0
PREAI
errSubramanian, DA; Chin, A; Shi, YH; Liu, GW; Langer, R; Traverso, G
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Remarkably High Dielectric Constant and Capacitance Density by Ni/ZrO2/TiN Using Nanosecond Laser and Surface Plasma Effect
errNANOMATERIALS
IF4.3
err2025-02-05
err0
errOAAI
errFan, Wei Ting; Pooja, Pheiroijam; Chin, Albert
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errSave
Impact of UV annealing on the hole effective mobility in SnO pFET
errSCIENTIFIC REPORTS
IF3.9
err2024-11-01
err0
errOAAI
errZeng, Shi-Hao; Pooja, Pheiroijam; Wu, Jiancheng; Chin, Albert
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Superior High Transistor's Effective Mobility of 325 cm2/V-s by 5 nm Quasi-Two-Dimensional SnON nFET
errNANOMATERIALS
IF4.3
err2023-06-20
err3
errOAAI
errPooja, Pheiroijam; Chien, Chun Che; Chin, Albert
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Outstanding High Field-Effect Mobility of 299 cm2 V-1 s-1 by Nitrogen-Doped SnO2 Nanosheet Thin-Film Transistor
errADVANCED MATERIALS TECHNOLOGIES
IF6.2
err2023-01-29
err5
PREAI
errPooja, Pheiroijam; Che, Chien Chun; Zeng, Shi-Hao; Lee, Yu Chieh; Yen, Te-Jui; Chin, Albert
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errSave
Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor
errNANOMATERIALS
IF4.3
err2022-01-14
err4
errOAAI
errYen, Te Jui; Chin, Albert; Chan, Weng Kent; Chen, Hsin-Yi Tiffany; Gritsenko, Vladimir
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errSave
Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation
errNANOMATERIALS
IF4.3
err2021-05-25
err18
errOAAI
errYen, Te-Jui; Chin, Albert; Gritsenko, Vladimir
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errSave
Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport: Part II-Films
errMATERIALIA
IF2.9
err2021-03-01
err14
PREAI
errIslamov, Damir R.; Gritsenko, Vladimir A.; Perevalov, Timofey, V; Aliev, Vladimir Sh; Nadolinny, Vladimir A.; Chin, Albert
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Charge transport mechanism in the forming-free memristor based on silicon nitride
errSCIENTIFIC REPORTS
IF3.9
err2021-01-28
err23
errOAAI
errGismatulin, Andrei A.; Kamaev, Gennadiy N.; Kruchinin, Vladimir N.; Gritsenko, Vladimir A.; Orlov, Oleg M.; Chin, Albert
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Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer
errNANOMATERIALS
IF4.3
err2021-01-03
err17
errOAAI
errYen, Te Jui; Chin, Albert; Gritsenko, Vladimir
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errSave
High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer
errNANOMATERIALS
IF4.3
err2020-10-28
err13
errOAAI
errYen, Te Jui; Chin, Albert; Gritsenko, Vladimir
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errSave
High Performance All Nonmetal SiNx Resistive Random Access Memory with Strong Process Dependence
errSCIENTIFIC REPORTS
IF3.9
err2020-02-18
err31
errOAAI
errYen, Te Jui; Chin, Albert; Gritsenko, Vladimir
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Charge transport mechanism in SiNx-based memristor
errAPPLIED PHYSICS LETTERS
IF3.6
err2019-12-19
err25
PREAI
errGismatulin, A. A.; Gritsenko, V. A.; Yen, T-J; Chin, A.
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The leakage current effect of thin gate oxides (2.4-2.7 nm) with in situ native oxide desorption
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err6
PREAI
errLai, JM; Chieng, WH; Lin, BC; Chin, A; Tsai, C
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Ultrathin N2O-oxide with atomically flat interfaces
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err1
PREAI
errChin, A; Chen, WJ; Lin, BC; Kao, JH; Tsai, C; Huang, JCM
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errSave
Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films
errAPPLIED PHYSICS LETTERS
IF3.6
err2019-06-13
err28
PREAI
errVolodin, V. A.; Kamaev, G. N.; Gritsenko, V. A.; Gismatulin, A. A.; Chin, A.; Vergnat, M.
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errSave
All Nonmetal Resistive Random Access Memory
errSCIENTIFIC REPORTS
IF3.9
err2019-04-16
err29
errOAAI
errYen, Te Jui; Gismatulin, Andrei; Volodin, Vladimir; Gritsenko, Vladimir; Chin, Albert
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errSave
Charge transport mechanism of high-resistive state in RRAM based on SiOx
errAPPLIED PHYSICS LETTERS
IF3.6
err2019-01-25
err20
PREAI
errGismatulin, A. A.; Kruchinin, V. N.; Gritsenko, V. A.; Prosvirin, I. P.; Yen, T. -J.; Chin, A.
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errSave
Tuning the Morphology of Isoindigo Donor-Acceptor Polymer Film for High Sensitivity Ammonia Sensor
errADVANCED FUNCTIONAL MATERIALS
IF19
err2018-08-14
err52
PREAI
errLu, Chun-Fu; Shih, Cheng-Wei; Chen, Chien-An; Chin, Albert; Su, Wei-Fang
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Research Directions

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Co-authors
Cooperation Journals
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Dim‐Lee Kwong
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C
Ching‐Hsuan Tung
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T
Tony Low
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