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Benjamin Huet

Pennsylvania State University

0H-index
0Paper Count
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Published Papers 14
Publication Date
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Comparison of the MOCVD growth and properties of wafer-scale transition metal dichalcogenide epitaxial monolayers
err2D Materials
IF4.3
err2025-08-13
err0
errOAAI
errTanushree H Choudhury; Nicholas Trainor; Chen Chen; Mikhail Chubarov; Saiphaneendra Bachu; Kasra Momeni; James Spencer Lundh; Danielle Reifsnyder Hickey; Tianyi Zhang; Amritanand Sebastian; Haoyue Zhu; Baokun Song; Yueli Chen; Benjamin Huet; Anushka Bansal; Sukwon Choi; Nasim Alem; Mauricio Terrones; Deep Jariwala; Saptarshi Das; Joan M Redwing
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Quantum Confined Luminescence in Two Dimensions
errACS PHOTONICS
IF6.7
err2024-12-26
err1
errOAAI
errBachu, Saiphaneendra; Habis, Fatimah; Huet, Benjamin; Woo, Steffi Y.; Miao, Leixin; Hickey, Danielle Reifsnyder; Kim, Gwangwoo; Trainor, Nicholas; Watanabe, Kenji; Taniguchi, Takashi; Jariwala, Deep; Redwing, Joan M.; Wang, Yuanxi; Kociak, Mathieu; Tizei, Luiz H. G.; Alem, Nasim
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Confinement of excited states in two-dimensional, in-plane, quantum heterostructures
errNATURE COMMUNICATIONS
IF15.7
err2024-07-28
err0
errOAAI
errKim, Gwangwoo; Huet, Benjamin; Stevens, Christopher E.; Jo, Kiyoung; Tsai, Jeng-Yuan; Bachu, Saiphaneendra; Leger, Meghan; Song, Seunguk; Rahaman, Mahfujur; Ma, Kyung Yeol; Glavin, Nicholas R.; Shin, Hyeon Suk; Alem, Nasim; Yan, Qimin; Hendrickson, Joshua R.; Redwing, Joan M.; Jariwala, Deep
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Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire
errNATURE NANOTECHNOLOGY
IF34.9
err2023-07-27
err38
errOAAI
errZhu, Haoyue; Nayir, Nadire; Choudhury, Tanushree H. H.; Bansal, Anushka; Huet, Benjamin; Zhang, Kunyan; Puretzky, Alexander A. A.; Bachu, Saiphaneendra; York, Krystal; Mc Knight, Thomas V.; Trainor, Nicholas; Oberoi, Aaryan; Wang, Ke; Das, Saptarshi; Makin, Robert A. A.; Durbin, Steven M. M.; Huang, Shengxi; Alem, Nasim; Crespi, Vincent H. H.; van Duin, Adri C. T.; Redwing, Joan M. M.
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Space-charge limited and ultrafast dynamics in graphene-based nano-gaps
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-07-05
err2
PREAI
errGroebmeyer, J.; Zimmermann, P.; Huet, B.; Robinson, J. A.; Holleitner, A. W.
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Role of Bilayer Graphene Microstructure on the Nucleation of WSe2 Overlayers
errACS NANO
IF16
err2023-06-27
err4
PREAI
errBachu, Saiphaneendra; Kowalik, Malgorzata; Huet, Benjamin; Nayir, Nadire; Dwivedi, Swarit; Hickey, Danielle Reifsnyder; Qian, Chenhao; Snyder, David W.; Rotkin, Slava V.; Redwing, Joan M.; van Duin, Adri C. T.; Alem, Nasim
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Substrate Modification during Chemical Vapor Deposition of hBN on Sapphire
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2021-11-08
err24
PREAI
errBansal, Anushka; Hilse, Maria; Huet, Benjamin; Wang, Ke; Kozhakhmetov, Azimkhan; Kim, Ji Hyun; Bachu, Saiphaneendra; Alem, Nasim; Collazo, Ramon; Robinson, Joshua A.; Engel-Herbert, Roman; Redwing, Joan M.
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Orientation domain dispersions in wafer scale epitaxial monolayer WSe2 on sapphire
errAPPLIED SURFACE SCIENCE
IF6.9
err2021-11-01
err9
errOAAI
errChen, Xuegang; Huet, Benjamin; Choudhury, Tanushree H.; Redwing, Joan M.; Lu, Toh-Ming; Wang, Gwo-Ching
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Influence of the Underlying Substrate on the Physical Vapor Deposition of Zn-Phthalocyanine on Graphene
errACS OMEGA
IF4.3
err2021-07-27
err5
errOAAI
errMirabito, Timothy; Huet, Benjamin; Redwing, Joan M.; Snyder, David W.
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Single layer graphene controlled surface and bulk indentation plasticity in copper
errINTERNATIONAL JOURNAL OF PLASTICITY
IF12.8
err2021-03-01
err14
errOAAI
errBahrami, F.; Hammad, M.; Fivel, M.; Huet, B.; D'Haese, C.; Ding, L.; Nysten, B.; Idrissi, H.; Raskin, J. P.; Pardoen, T.
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Hybrid GaAsSb/GaAs Heterostructure Core-Shell Nanowire/Graphene and Photodetector Applications
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2020-09-28
err18
PREAI
errNalamati, Surya; Devkota, Shisir; Li, Jia; Lavelle, Robert; Huet, Benjamin; Snyder, David; Penn, Aubrey; Garcia, Roberto; Reynolds, Lewis, Jr.; Iyer, Shanthi
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Enhanced ultraviolet photoresponse in a graphene-gated ultra-thin Si-based photodiod
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2019-04-09
err12
PREAI
errLi, Guoli; Andre, Nicolas; Huet, Benjamin; Delhaye, Thibault; Reckinger, Nicolas; Francis, Laurent A.; Liao, Lei; Raskin, Ean-Pierre; Zeng, Yun; Flandre, Denis
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Role of the Cu substrate in the growth of ultra-flat crack-free highly-crystalline single-layer graphene
errNANOSCALE
IF5.1
err2018-01-01
err25
PREAI
errHuet, Benjamin; Raskin, Jean-Pierre
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Pressure-Controlled Chemical Vapor Deposition of Single-Layer Graphene with Millimeter-Size Domains on Thin Copper Film
errCHEMISTRY OF MATERIALS
IF7
err2017-04-04
err38
PREAI
errHuet, Benjamin; Raskin, Jean-Pierre
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Research Directions

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Co-authors
Cooperation Journals
T
Takashi Taniguchi
H-index: 198 · Papers: 5.5K
M
Mauricio Terrones
H-index: 131 · Papers: 1.0K
A
Adri C. T. van Duin
H-index: 114 · Papers: 818
廖雷 cover
廖雷 (Lei Liao)
H-index: 104 · Papers: 765
J
Joan M. Redwing
H-index: 74 · Papers: 571
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